MRF6VP41KH 1000 Watt Mosfet

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RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs

Designed primarily for pulsed wideband applications with frequencies up to
500 MHz.
Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulsed Performance at 450 MHz: VDD = 50 Volts,
IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power