RD30HVF1 Power Transistor
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RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
High power gain: Pout>30W,
Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60ty;p.
APPLICATION
For output stage of high power amplifiers in VHF band Mobile radio sets.