2SC1946 30 Watt VHF
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A silicon NPN epitaxial planer type transistor designed for RF power amplifiers
High Power Gain: Gpe >/= 6,7dB (VCC = 13,5V, PO = 28W, f = 175MHz)
Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 30W, f = 175MHz